发明名称 SEMICONDUCTOR DEVICE HAVING FUSE CIRCUITRY ON CELL AREA AND FABRICATING METHOD THEREOF
摘要 <p>PURPOSE: A semiconductor device having fuse circuitry on a cell area is provided to increase integration of a semiconductor memory chip by transferring the fuse circuitry to the cell area, and to improve a focus problem in a laser repair process by redistributing the fuse circuitry under a passivation layer to a place on the passivation layer. CONSTITUTION: A semiconductor substrate(100) is prepared. The cell area(122) is formed on the semiconductor substrate. A peripheral area is formed in an area on the semiconductor substrate different from the cell area. The fuse circuitry(116) is formed on the cell area. The fuse circuitry is formed in the same plane as a pad redistribution pattern(110) on the cell area.</p>
申请公布号 KR20030037065(A) 申请公布日期 2003.05.12
申请号 KR20010068159 申请日期 2001.11.02
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 CHOI, IL HEUNG;PARK, MIN SANG;SON, MIN YEONG;SONG, YEONG HUI
分类号 H01L21/3205;H01L21/60;H01L21/82;H01L23/52;H01L23/525;H01L27/02;H01L27/10;H01L27/108 主分类号 H01L21/3205
代理机构 代理人
主权项
地址