| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device having a pin structure with a reduced on-voltage. SOLUTION: In a semiconductor device having a pin structure, a ratio of a quantity of an impurity of an n<SP>-</SP>type semiconductor substrate 101 to that of a p-layer 102 is made 2/3 or smaller in a range in which a depletion layer extends when it is produced by application of a reverse bias to a p-n junction between the p-layer 102 and the n<SP>-</SP>type semiconductor substrate 101. With this arrangement, it is possible to make the semiconductor device thinner and, thereby, reduce the on-voltage. COPYRIGHT: (C)2006,JPO&NCIPI
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