| 摘要 |
PROBLEM TO BE SOLVED: To provide a simulation model that applies to a MOS transistor with a wide gate width and easily provides a set of parameters for multiple MOS transistors with different gate widths and a circuit simulation method using that model. SOLUTION: This model refers to a simulation model where a basic parameter set is extracted by the parameter extraction software that extracts a parameter set of a basic simulation model stored in the above-mentioned SPICE. In this model, only the parameter setting (value) of the above-mentioned MOS transistor mobility U0 can be changed from the parameter value extracted by the above-mentioned parameter extraction software to another according to the current-voltage characteristic between drain and source in the above-mentioned MOS transistor. COPYRIGHT: (C)2006,JPO&NCIPI
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