发明名称 MAGNESIUM OXIDE SINGLE CRYSTAL AND ITS MANUFACTURING METHOD
摘要 PROBLEM TO BE SOLVED: To provide a magnesium oxide (MgO) single crystal for obtaining an MgO single crystal vapor deposition material which can prevent the occurrence of a splash without reducing the depositing speed when depositing by an electron-beam vapor deposition method or the like, and to provide the MgO single crystal for obtaining an MgO single crystal substrate which can form a superconductor thin film excellent for example in a superconductive characteristic. SOLUTION: The MgO single crystal has a calcium content of 150×10<SP>-6</SP>to 1,000×10<SP>-6</SP>kg/kg, and a silicon content of 10×10<SP>-6</SP>kg/kg or lower, wherein when the polished surface of the MgO single crystal is analyzed by the TOF-SIMS method, the fluctuation of the detection quantity of calcium fragment ions is 30% or less in terms of a CV value. Also provided are an MgO single crystal vapor deposition material and an MgO single crystal substrate for forming a thin film which are obtained from the MgO single crystal. COPYRIGHT: (C)2007,JPO&INPIT
申请公布号 JP2006265058(A) 申请公布日期 2006.10.05
申请号 JP20050087967 申请日期 2005.03.25
申请人 TATEHO CHEM IND CO LTD 发明人 TOTSUKA ATSUO;KAWAGUCHI YOSHIFUMI;KUNISHIGE MASAAKI
分类号 C30B29/16;C23C14/08 主分类号 C30B29/16
代理机构 代理人
主权项
地址