| 摘要 |
A semiconductor memory device includes a memory cell array including a plurality of memory blocks, a plurality of redundancy sections respectively provided for the plurality of memory blocks and configured to be substituted for defective memory cells, a test circuit that carries out a test on the memory cell array and outputs defective data, first and second memory circuit that temporarily store the defective data, a first write circuit that writes the defective data alternately in the first and second memory circuits, a first read circuit that reads the defective data alternately from the first and second memory circuits, a plurality of third memory circuits respectively provided for the plurality of memory blocks, that store the defective data, and a second write circuit that writes defective data read by the first read circuit in a third memory circuit corresponding to a memory block in which an error occurred.
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