| 摘要 |
A CMP apparatus is provided to obtain uniform polish characteristics by supplying uniformly a slurry to center and peripheral regions of a wafer using a multiple slurry supply unit composed of at least two nozzles. A CMP apparatus includes a platen attached with a polish pad, a conditioner for conditioning the polish pad on the platen, a polish head and a slurry supply unit. The polish head is used for loading a wafer. The polishing head is capable of rotating and pressing the wafer against the polishing pad of the platen. The slurry supply unit(203) is used for supplying simultaneously a slurry onto a center region and a peripheral region of the platen. The slurry supply unit is composed of at least two nozzles(203a,203b).
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