| 摘要 |
A nitride semiconductor light emitting device and a manufacturing method thereof are provided to emit effectively the photon generated in the light emitting device outwardly by forming a nano-sized structure on a surface of a substrate. A light emitting device includes a nano-sized structure(113) formed on a substrate(111) and having an uneven surface, and a nitride junction element formed on the substrate. The nano-sized structure has a size of 100nm or more, a diameter of 100 to 1000nm, and a height of 100 to 600nm. The nitride junction element has a first nitride layer(117) formed on the substrate, an active layer(119) formed on the first nitride layer, and a second nitride layer(121) formed on the active layer.
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