发明名称 Trench memory
摘要 A trench device and method for fabricating same are provided. The trench device has a collar with a first portion that is doped and a second portion that is undoped. Fabrication of the partially doped collar can be done by deposition of a doped insulator in the trench, removal of a portion of the doped deposition, deposition of an undoped insulator in the trench and removal of a portion of the doped and undoped insulators.
申请公布号 US7326986(B2) 申请公布日期 2008.02.05
申请号 US20060306669 申请日期 2006.01.06
申请人 INTERNATIONAL BUSINESS MACHINES CORPORATION 发明人 CHENG KANGGUO;WANG GENG
分类号 H01L27/108;H01L29/76;H01L29/94;H01L31/119 主分类号 H01L27/108
代理机构 代理人
主权项
地址