发明名称 Forming process of thin film pattern and manufacturing process of device, electro-optical apparatus and electronic apparatus
摘要 The invention provides a forming process of a thin film pattern capable of properly realizing a thin line. The forming process of a thin film pattern of the invention can be a process of forming a thin film pattern by arranging a functional liquid on a substrate P. The process can include a bank forming step to set up banks protrudingly on the substrate corresponding to the thin film pattern, a repellent liquefaction step of imparting a liquid repellent property to the bank by CF<SUB>4 </SUB>plasma processing, and a material arranging step of arranging the functional liquid between the banks imparted with the liquid repellent property.
申请公布号 US7326585(B2) 申请公布日期 2008.02.05
申请号 US20040843426 申请日期 2004.05.12
申请人 SEIKO EPSON CORPORATION 发明人 HIRAI TOSHIMITSU
分类号 G02F1/13;H01L21/00;B05D1/26;B05D3/04;G02F1/1333;H01L21/02;H01L21/20;H01L21/208;H01L21/288;H01L21/3205;H01L21/768;H05K3/12 主分类号 G02F1/13
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