MASK PATTERN DESIGNING METHOD AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD USING THE SAME

摘要

A time required for optical proximity correction (OPC) processing in mask pattern designing is reduced. A mask pattern is formed by laying out cells to which the OPC processing has been previously performed, then, at the time of finely adjusting a correction quantity for the OPC, for each cell, calculation for the fine adjustment is performed only for a region where an adjustable region of the cell itself and surrounding regions of other cells adjacent to the adjustable region overlap each other. Thus, a range of performing the fine adjustment of an OPC pattern (an area of a region for which the calculation is required) can be reduced. Since the mask pattern can be efficiently designed, processing time and processing cost required for the mask pattern designing can be remarkably reduced.