| 摘要 |
A method for manufacturing a 45 degrees tilt mirror is provided to improve reflectivity and suppress diffused reflection by depositing the multilayer thin film with high or low refractive index on a reflective surface. A semiconductor wafer(2) is sliced from a semiconductor ingot. The semiconductor wafer is cut to be tilted to 9.74 degrees in a slicing surface. A part of the upper side of the semiconductor wafer is coated with a photoresist(3). The photoresist of the part to be etched is removed by the photolithographic method. A trench is formed by etching the part without the photoresist by using a isotropic wet etching method or an anisotropic dry etch method. The anisotropic wet etching solution including KOH is injected through the part in which the trench is formed. The etching is stopped by meeting the respective surfaces of 45.00 degrees and 64.48 degrees formed in both sides of the trench. The photoresist of the wafer is removed. The mirror surface is formed by depositing the dielectric thin film of multilayer or single layer and the metal reflection film on the upper side of the wafer. The reflective mirror is completed by the scribing or sawing method. |
