发明名称 FIELD EFFECT TRANSISTOR, METHOD OF MANUFACTURING THE SAME, AND ELECTRONIC DEVICE USING THE SAME
摘要 A field-effect transistor includes a semiconductor layer (14) having a portion functioning as a channel region. The semiconductor layer (14) includes, as its constituent components, a plurality of electrically conductive microparticles (52), organic semiconductor molecules (53) bonded to the microparticles (52) so as to link the microparticles to one another (52), and cyclic molecules. Each of the organic semiconductor molecules (53) includes a pi-electron conjugated chain as its main chain, and the pi-electron conjugated chain is insulated by cyclic molecules.
申请公布号 US2009152532(A1) 申请公布日期 2009.06.18
申请号 US20050719641 申请日期 2005.11.18
申请人 MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD 发明人 TAKEUCHI TAKAYUKI;HARADA KENJI;KAMBE NOBUAKI;TERAO JUN
分类号 H01L51/00;H01L51/40 主分类号 H01L51/00
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