| 摘要 |
PROBLEM TO BE SOLVED: To provide a generation method of a wafer, capable of effectively generating the wafer from an ingot.SOLUTION: A generating method of a wafer, for forming the wafer from a hexagonal single crystal ingot, includes a step of positioning a light condensing point of a laser beam of a wavelength having transmissivity to a depth corresponding to a thickness of the wafer generated from a first surface, forming a modified layer parallel to a first surface and a crack that is extended from the modified layer by relatively moving the light condensing point and the ingot, and forming a separation start point. The step of forming the separation start point includes: a modified layer forming step of forming a liner modified layer in a direction crossing to a direction so that a c-axis (vertical axis of a separation surface) is inclined by an off-angle to a perpendicular line of the first surface and the off-angle is formed between the first surface and a c surface (separation surface) by relatively moving the light condensing point of laser beam. A numerical aperture of a condensing lens forming the light condensing point of laser beam in the modified layer forming step is set to 0.2 to 0.85.SELECTED DRAWING: Figure 11 |
