| 摘要 |
The present invention is to provide a plasma etching method for forming a hole with a desired opening diameter in a silicon nitride layer while preventing the front end from being narrow. The plasma etching method comprises: a first process of supplying raw gas including fluorocarbon and oxygen into a plasma processing apparatus; and a second process of generating plasma by using the raw gas to etch a silicon nitride layer (106a) of a processing object through a first mask (106), wherein the second process is performed in a state of attaching an organic film (ad) generated from the raw gas onto an inner wall of an opening of the first mask (106) by gradually lowering the temperature of the processing object from the first temperature (T1) (80°C) to the second temperature (T2) (40°C). |
