发明名称 Memory cell
摘要 Nonvolatile storage with long memory endurance having the advantages of easy manufacturability is obtained by using a memory cell having an information storage element including a ferroelectric material, and operating the memory cell in a volatile operating mode and a nonvolatile operating mode. The option of operating the memory cell in the volatile operating mode enables the associated advantages of high memory speed at long endurance, wherein, however, the option of operating the memory cell in the nonvolatile operating mode can bridge gaps in the power supply.
申请公布号 US9368182(B2) 申请公布日期 2016.06.14
申请号 US201414564212 申请日期 2014.12.09
申请人 Fraunhofer-Gesellschaft zur Foerderung der angewandten Forschung e.V. 发明人 Mueller Johannes
分类号 G11C11/22;G11C7/00;G11C14/00;G11C11/56 主分类号 G11C11/22
代理机构 Keating & Bennett, LLP 代理人 Keating & Bennett, LLP
主权项 1. Memory cell comprising an information storage element comprising a ferroelectric material, wherein the memory cell comprises a volatile operating mode and a nonvolatile operating mode, wherein the memory cell is implemented to use, in the nonvolatile operating mode, an operating voltage across the information storage element that is increased with respect to the volatile operating mode, such that in the nonvolatile operating mode, an electric coercive field strength of the ferroelectric material is exceeded, and in the volatile operating mode, the electric coercive field strength of the ferroelectric material is not exceeded, orthe operating voltage across the information storage element in the nonvolatile operating mode results in a saturated polarization hysteresis and in the volatile operating mode only in an unsaturated polarization hysteresis.
地址 Munich DE