发明名称 Semiconductor memory apparatus
摘要 A semiconductor memory apparatus may include a write driver, a data sensing section, and a programming control section. The write driver may write an input data into a memory cell in response to a write signal. The data sensing section may generate a comparison flag signal by comparing an output data outputted from the memory cell with a reference voltage in response to a verification read signal. The programming control section may generate the write signal for an initial write operation and the verification read signal in response to a write command, and generate the write signal for a following write operation as soon as the comparison flag signal is at a predetermined level.
申请公布号 US9368171(B2) 申请公布日期 2016.06.14
申请号 US201414562936 申请日期 2014.12.08
申请人 SK HYNIX INC 发明人 Ahn Chang Yong;Em Ho Seok
分类号 G11C7/22;G11C7/06;G11C7/12 主分类号 G11C7/22
代理机构 William Park & Associates Ltd. 代理人 William Park & Associates Ltd.
主权项 1. A semiconductor memory apparatus comprising: a write driver configured to write an input data into a memory cell in response to a write signal; a data sensing section configured to generate a comparison flag signal by comparing an output data outputted from the memory cell with a reference voltage in response to a verification read signal; and a programming control section configured to generate the write signal for an initial write operation and the verification read signal in response to a write command, and generate the write signal for a following write operation as soon as the comparison flag signal is at a predetermined level.
地址 Icheon-Si KR