| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which can inhibit deterioration in blocking breakdown voltage while functioning as a normally-off device and inhibit an increase in on-resistance.SOLUTION: A semiconductor device comprises an AlGaN layer 4 composed of a first AlGaN layer 4a and a second AlGaN layer 4b and the second AlGaN layer 4b on an upper layer side is formed only in vicinity of a gate structure. In addition, an Al mixed crystal ratio x of the first AlGaN layer 4a is made to be higher than an Al mixed crystal ratio y of the second AlGaN layer 4b. With this composition, the semiconductor device which can inhibit deterioration in blocking breakdown voltage while functioning as a normally-off device and inhibit an increase in on-resistance can be provided.SELECTED DRAWING: Figure 1 |
