| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor light-receiving device having excellent wavelength dependency of light transmittance in an infrared wavelength region.SOLUTION: A semiconductor light-receiving device IMS comprises a semiconductor light-receiving element PDA, and an integrated element ROIC including a reading circuit 33 connected to the semiconductor light-receiving element PDA via a bump electrode BP. The semiconductor light-receiving element PDA includes a light absorption layer 15a sensitive to infrared radiation, a semiconductor laminate 12 for a photodiode, and a GaSb substrate 11 including a principal surface 11a on which the semiconductor laminate 12 is mounted and a rear surface 11b for receiving light containing infrared radiation. The GaSb substrate 11 includes GaSb co-added with a p-type dopant DP and an n-type dopant DN. The light absorption layer 15a comprises a III-V compound semiconductor including antimony as a V group element.SELECTED DRAWING: Figure 1 |
