| 发明名称 | Field emission devices and methods of manufacturing emitters thereof | ||
| 摘要 | A field emission device may comprise: an emitter comprising a cathode electrode and an electron emission source supported by the cathode electrode; an insulating spacer around the emitter, the insulating spacer forming an opening that is a path of electrons emitted from the electron emission source; and/or a gate electrode around the opening. The electron emission source may comprise a plurality of graphene thin films vertically supported in the cathode electrode toward the opening. | ||
| 申请公布号 | US9396901(B2) | 申请公布日期 | 2016.07.19 |
| 申请号 | US201414474213 | 申请日期 | 2014.09.01 |
| 申请人 | Samsung Electronics Co., Ltd.;Kumoh National Institute of Technology Industry-Academic Cooperation Foundation | 发明人 | Lee Donggu;Park Shanghyeun;Kim Yongchul;Kim Ilhwan;Jeong Taewon |
| 分类号 | H01J1/308;H01J9/02;H01J1/304 | 主分类号 | H01J1/308 |
| 代理机构 | Harness, Dickey & Pierce, P.L.C. | 代理人 | Harness, Dickey & Pierce, P.L.C. |
| 主权项 | 1. A method of manufacturing an emitter, the method comprising: forming a graphene thin film on a surface of a conductive film; forming a stack structure in which the graphene thin film and the conductive film are repeatedly stacked; forming a sintered structure by molding and sintering the stack structure and a conductive powder, wherein the sintered structure has a form in which the grapheme thin film is in a conductor; and partially removing the conductor in a length direction of the graphene thin film. | ||
| 地址 | Gyeonggi-do KR | ||