METHOD FOR FORMING A NANOWIRE STRUCTURE

摘要

Disclosed is a method for forming a nanowire structure. The method for forming the nanowire structure comprises: a) step for forming a first semiconductor layer on a substrate; b) step for etching the first semiconductor layer to form a patterned first semiconductor layer; c) step for forming a dielectric layer on the patterned first semiconductor layer; and d) step for forming a second semiconductor layer on the patterned first semiconductor layer and the dielectric layer. The method for forming the nanowire structure comprises: e) step for repeating the a) step to the d) step at least once; f) step for repeating the a) step to the c) step after the e) step once; g) step for etching the patterned first semiconductor layer, the dielectric layer, and the second semiconductor layer to form a pin structure; and h) step for removing the patterned first semiconductor layer from the pin structure.