Solid-state image pickup element and image pickup apparatus

摘要

Disclosed herein is a solid-state image pickup element, including: a photoelectric conversion region; a transistor; an isolation region of a first conductivity type configured to isolate the photoelectric conversion region and the transistor from each other; a well region of the first conductivity type having the photoelectric conversion region, the transistor, and the isolation region of the first conductivity type formed therein; a contact portion configured to supply an electric potential used to fix the well region to a given electric potential; and an impurity region of the first conductivity type formed so as to extend in a depth direction from a surface of the isolation region of the first conductivity type in the isolation region of the first conductivity type between the contact portion and the photoelectric conversion region, and having a sufficiently higher impurity concentration than that of the isolation region of the first conductivity type.

主权项

1. An imaging device, comprising:
a substrate; a well region in the substrate; a plurality of photoelectric conversion regions in the well region; a floating diffusion, an amplifier transistor, a select transistor and a reset transistor shared by at least two of the photoelectric conversion regions; a contact portion configured to apply a predetermined voltage to the well region; an isolation region in the well region; and an impurity region of a first conductivity type between the contact portion and the photoelectric conversion regions, wherein,
in a plan view, the isolation region is formed so as to have a planar pattern including therein a region of a second conductivity type of the transistors, and the contact portion,in the plan view, the impurity region is between the region of the second conductivity type of the transistors and the contact portion, andthe contact portions, the select transistor and the amplifier transistor are disposed along a same line between two adjacent rows of the photoelectric conversion regions.