Vertical structure non-volatile memory device having insulating regions that are formed as air gaps

摘要

A vertical structure non-volatile memory device includes semiconductor regions that vertically extend on a substrate, a plurality of memory cell strings that vertically extend on the substrate along sidewalls of the semiconductor regions and include a plurality of memory cells and at least one or more first selection transistors, which are disposed on sides of the memory cells and are adjacent to one another. A plurality of wordlines is connected to the memory cells of the memory cell strings. A first selection line is connected to the selection transistors of the memory cell strings and insulating regions are formed as air gaps between the first selection transistors of the adjacent memory cell strings.

主权项

1. A vertical structure non-volatile memory device comprising:
a stacked structure on a substrate, the stacked structure comprising stacks of conductive layers and interlayer insulating layers alternately stacked one on top of the other; a plurality of semiconductor regions within a plurality of holes vertically extending through the stacked structure, the plurality of holes being spaced apart from one another in a first direction and a second direction intersecting the first direction; and a plurality of cut regions passing through at least one of the conductive layers along a third direction vertical to the first and second directions and extending along the second direction between the plurality of holes, the plurality of cut regions comprising:
at least one first cut region passing through the full thickness of the stacked structure to the substrate and being occupied by a metal layer; andat least one second cut region partially passing through the stacked structure from a top of the stacked structure and being occupied by an air gap, the air gap extending parallel with the metal layer.