| 发明名称 | Integrated passive devices for finFET technologies | ||
| 摘要 | Integrated passive devices for silicon on insulator (SOI) FinFET technologies and methods of manufacture are disclosed. The method includes forming a passive device on a substrate on insulator material. The method further includes removing a portion of the insulator material to expose an underside surface of the substrate on insulator material. The method further includes forming material on the underside surface of the substrate on insulator material, thereby locally thickening the substrate on insulator material under the passive device. | ||
| 申请公布号 | US9406665(B2) | 申请公布日期 | 2016.08.02 |
| 申请号 | US201514686981 | 申请日期 | 2015.04.15 |
| 申请人 | INTERNATIONAL BUSINESS MACHINES CORPORATION | 发明人 | Adam Thomas N.;Cheng Kangguo;Haran Balasubramanian Pranatharthi;Ponoth Shom;Standaert Theodorus E.;Yamashita Tenko |
| 分类号 | H01L21/20;H01L27/02;H01L21/84;H01L27/12 | 主分类号 | H01L21/20 |
| 代理机构 | Roberts, Mlotkowski, Safran & Cole PC | 代理人 | Myers Steven;Calderon Andrew M.;Roberts, Mlotkowski, Safran & Cole PC |
| 主权项 | 1. A structure, comprising: a passive device formed on a silicon on insulator substrate which is locally thickened directly under the passive device by an epitaxially grown semiconductor material on an underside surface of the silicon on insulator substrate; and flowable oxide in contact with the epitaxially grown semiconductor material and the passive device. | ||
| 地址 | Armonk NY US | ||