SELECTIVELY LATERAL GROWTH OF SILICON OXIDE THIN FILM

摘要

Implementations disclosed herein generally relate to methods of forming silicon oxide films. The methods can include performing silylation on the surface of the substrate having terminal hydroxyl groups. The hydroxyl groups on the surface of the substrate are then regenerated using a plasma and H2O soak in order to perform an additional silylation. Further methods include catalyzing the exposed surfaces using a Lewis acid, directionally inactivating the exposed first and second surfaces and deposition of a silicon containing layer on the sidewall surfaces. Multiple plasma treatments may be performed to deposit a layer having a desired thickness.

主权项

1. A method of depositing a silicon oxide film, sequentially comprising:
positioning a substrate in a process chamber, the substrate having:
a first layer; anda second layer disposed over the first layer, the second layer having an exposed second surface and one or more features formed therein, the features creating one or more sidewall surfaces and an exposed first surface; treating the substrate with a catalyst, the catalyst comprising a Lewis acid, the catalyst forming terminal reactive groups on the exposed first surface, the one or more sidewall surfaces and the exposed second surface; delivering a catalyst deactivator to the substrate, the catalyst deactivator being activated by a plasma, the substrate being biased such that the catalyst deactivator is received by the exposed first surface and the exposed second surface, the terminal reactive groups being maintained on the one or more sidewall surfaces; and delivering a silanol to the substrate, the silanol depositing a silicon-containing layer on the one or more sidewall surfaces.