| 摘要 |
1,224,146. Depositing/removing silicon from surfaces. COMPAGNIE GENERALE D'ELECTRICITE. 30 Jan., 1969 [1 Feb., 1968], No. 5097/69. Heading C1A. [Also in Divisions C7 and H1] A substrate of silicon is formed with recesses or a substrate is formed with silicon projections, said recesses or projections having orthogonal flanks, by disposing said substrate in a reaction space opposite to a reaction body, which is of silicon if projections are to be formed, an inert layer, e.g. of SiO 2 , formed with apertures corresponding to the recesses or projections being placed over the silicon surface, an atmosphere comprising a silicon halide and an inert carrier gas at less than 50 mm. Hg is maintained between the substrate and reaction body, and a temperature gradient is set up between the substrate and reaction body, the silicon surface being hot, whereby silicon leaves said surface and deposits on the cooler surface as a result of the reaction Si+SiX 4 #. SiX 2 . In Fig. 2 the silicon body 21, is covered with a layer of intermediate inert material 227 (e.g. SiO 2 ) which defines the pattern to be formed, by the removal of Si from the silicon body, in an atmosphere containing preferably between 10<SP>-2</SP> and 10<SP>-4</SP> vol./vol. SiCl 4 at a toal pressure of preferably 1 mm.Hg, a corresponding pattern of silicon 25, being deposited upon the other body 31. The gas mixture may comprise, in addition a dopant. The intermediate layer pattern is preferably formed by the oxidation of the silicon followed by the opening of apertures in a known photolithogravure process. |
