| 摘要 |
A metal film, in particular, of high-purify tantalum is applied in such a shape, length and thickness on an insulated carrier, that the electrical resistance is at first, below the desired value. The final value is then approached by reducing the current-carrying cross-section of the film by the aid of an electrolytic forming process; the value is accurately set in a further step. The first step in the forming process is carried out in strong concentrated phosphoric acid.
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