Verfahren und Einrichtung zur Verbindung von Werkstuecken

摘要

1291983 Welding by fusion and pressure WESTERN ELECTRIC CO Inc 18 Nov 1969 [19 Nov 1968] 56376/69 Heading B3R Workpieces are joined together by applying radiant energy to a portion of the contiguous workpieces while simultaneously and substantially instantaneously applying a compressive force to the workpieces. As shown in Fig. 1 the contiguous surfaces of workpieces 12, 13 which are made of highly conductive material such as copper or aluminium are heated and melted by radiant energy in the form of a laser beam 14. A pancake coil 17 has electrical energy supplied to it to develop a high density magnetic flux 18 concentrated by a metallic flux concentrator 19 which interacts with fields produced by induced currents within the workpieces 12, 13 thereby creating a pressure upon the workpieces toward the work-table 11 and bonding takes place. In another embodiment, Fig. 2, tubular workpieces 21, 22, one within the other, are joined in a similar manner in which a helical coil 171 is positioned within a cylindrically shaped flux concentrator 23 and one or more beams of radiant energy 26, 27 are directed on to the contiguous portions of the workpieces to effect bonding. In a further embodiment, Fig. 3 (not shown), tubular workpieces to be bonded, one within another, are placed in a cylindrically shaped flux concentrator which is placed within a helical coil, and the beam of radiation is directed on to the contiguous portions of the workpieces. In the case when the workpieces are made of a low conductivity material an overlay composed of a high-conductivity material is placed over the contiguous portions to be bonded so that currents may be induced in the overlay which places a compressive force upon the workpieces. The overlay is provided with an opening for passage of the radiant beam. An electric system is provided for facilitating the simultaneous pulsing of the laser device with the generating of the magnetic field. The invention is used in connection with semi-conductors and thin film integrated circuits.