| 摘要 |
Single crystals of aluminium, gallium or indium phosphide are prepared by reacting excess of one of the metals Al, Ga or In with zinc phosphide in an inert atmosphere at 700-1000 DEG C. When the reaction is over zinc metal and unreacted Zn3P2 are volatilized off at about 1100 DEG C., and the metal phosphide produced is dissolved in the excess metal present by raising the temperature to about 1250 DEG C. The temperature is then slowly lowered to precipitate substantially all the metal phosphide. The crystals are platelets in which the developed faces are (111) and (</>bI </>bI </>bI). As a modification the preparation can incorporate a dopant such as ZnO, ZnS, CdS or others along with the selected metal and Zn3P2. |
