PASSIVATED SURFACES AND PROTECTIVE COATINGS FOR SEMICONDUCTOR DEVICES AND PROCESSES FOR PRODUCING THE SAME

摘要

1324531 Semi-conductor devices WESTING- HOUSE ELECTRIC CORP 2 Sept 1970 [30 Sept 1969] 41925/70 Heading H1K A PN-junction is passivated by etching its surface-emergent area; by cleaning the etched surface in a solution of (a) iodine or iodine and iodine pentoxide or of (b) ethylenediaminetetraacetic acid or a salt or derivative thereof; by forming on the cleaned surface a surface coating of (a) a cross-linked silicone polymer or of (b) a monolayer of linear silicone polymer or of (c) aluminium nitride, aluminium oxide, silicon oxide, silicon nitride, boron nitride, magnesium oxide, or silicon oxide-silicon nitride; and by forming on the surface coating a layer of a protective coating material comprising a room temperature vulcanizing rubber, a solid perfluorohydrocarbon, a solid polyfluorochlorohydrocarbon, a parylene, a cured resinous aromatic polyimide, a cured resinous aromatic polyamide-polyimide or a cured resinous benzimidazole-imide copolymer. The protective coating material may have distributed therein aluminium oxide, aluminium nitride, silicon oxide, silicon nitride, glass fibres, boron nitride, quartz, mica, magnesium oxide, PTFE, or alizarin. If the surface coating above is type (c), an intervening layer of cross-linked or linear silicone polymer may be formed between it and the protective coating. Structural details are given for silicon diodes and thyristors which may be of the compression-bonded encapsulated type. Reference is made to germanium, silicon carbide, and AIIIBV and AIIBVI semi-conductors.