| 摘要 |
PURPOSE:To secure the vapor growth of the insulating film in a short time and at the low temperature by enclosing the silane and other necessary gas into a capsule together with the wafer and with the presumed pressure. CONSTITUTION:Wafer 2 and cover 3 are inserted into quartz capsule 1, and then valve 4 is closed after exhausting the inside of the capsule to about 1 X 10<-5> torr via operation of valve 4 and 5. Valves 51-53 are opened and closed in sequence to send in each gas of the silane, phosphorus compound and oxidizing agent up to the necessary pressure. Then main body 1 and cover 3 are welded together with all valves closed. The capsule is then heated up to grow PSG on the wafer. In this method, the pressure can be selected freely inside the capsule over a wide range, ensuring a highly efficient formation of the insulating film with high pressure and at a low temperature. Furthermore, the film thickness becomes uniform since almost no gas current exists within the capsule. |
