| 摘要 |
PURPOSE: To provide a molecular beam epitaxial growth equipment which can form a II-VI compound semiconductor layer having a P-type ohmic layer without mixing Te in other layers, and a manufacturing method of an optical semiconductor device. CONSTITUTION: A molecular beam epitaxial growth (MBE) equipment 1 (MBE) is provided with at least a plurality of chambers constituted of a first chamber 12 and a second chamber 13. The first chamber 12 is used for forming a II-VI compound semiconductor layer which does not contain Te, and the second chamber 13 is used for forming a II-VI compound semiconductor layer which contains at least Te. The manufacturing method of an optical semiconductor device is a method for manufacturing an optical semiconductor device wherein II-VI compound semiconductor layers are laminated, and a II-VI compound semiconductor layer which contains at least Te is formed by using the MBE equipment 1. |
