| 摘要 |
PURPOSE:To suppress temperature rise when a heat seal by fusing is performed as well as to obtain a high degree of airtightness for the titled semiconductor device by a method wherein, when the aperture part of a container in which a semiconductor element is placed is sealed using a cap, a heat seal by fusing is performed while inert gas of a low temperature is being flown into the container. CONSTITUTION:On the back side of ceramic square tube bodies with a cover member, on the surface of which an aperture to be used for insertion of a solid-state image pickup element 5 is provided, a metal plate 4 is provided in such a manner that it will be adhered to the circumferential wall, and a cooling material 8 is installed on the lower surface of the metal plate 4. Also, on the inner circumferential fringe of the aperture on the cover member, a gold-plated layer 2 is coated, an element 5 is provided on the metal plate 4 which is exposed in the aperture, a gilded plate 7 of square ring-shape is arranged crosslinking to the layer 2 and a retangular glass plate 6, which is transparent cap, is adhered to the plate 7. Then, a thermo- pressure welding head 9 is pressed on the gilded plate 7 which is exposed on the circumference of the glass plate 6, and the layer 2 and the gilded plate 7 are adhered. According to this constitution, an air feeding hole 10 and an air exhausting hole 11 are provided on the opposing circumferences of the square tube bodies 1, and the metal plate 4 is adhered by applying inert gas while it is being cooled. Subsequently, the holes 10 and 11 are blocked by metal plates 16 and 17 through the intermediaries of plated layers 12 and 13. |
