VAPOR PHASE EPITAXY METHOD OF COMPOUND SEMICONDUCTOR,申请号JP19880087553-传众专利搜索

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发明名称	VAPOR PHASE EPITAXY METHOD OF COMPOUND SEMICONDUCTOR
摘要
申请公布号	JPH01259524(A)	申请公布日期	1989.10.17
申请号	JP19880087553	申请日期	1988.04.08
申请人	SUMITOMO CHEM CO LTD	发明人	MAEDA NAOYOSHI;HATA MASAHIKO;YOSHIURA YASUNARI;FUKUHARA NOBORU
分类号	H01L21/205	主分类号	H01L21/205
代理机构		代理人
主权项
地址

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