The reverse current in a power diode generates switching power losses in the diode. If the reverse current has a high peak, the diode can be destroyed. The reverse current peak and the quantity of charge carriers can be reduced while approximately maintaining the forward voltage constant by providing that the outer zones (6, 7) adjoining the weakly doped mid-section (1) of a diode have a thickness of less than 1 mu m and are doped by implanted ions with a dose of between 1 . 10<12> and 1 . 10<15> cm<-2>. <IMAGE>
申请公布号
DE3831279(A1)
申请公布日期
1990.03.15
申请号
DE19883831279
申请日期
1988.09.14
申请人
SIEMENS AG, 1000 BERLIN UND 8000 MUENCHEN, DE
发明人
MOURICK, PAUL, 8019 GLONN, DE;PORST, ALFRED, 8000 MUENCHEN, DE
