| 摘要 |
A superconductive ceramic thin film-formed single-crystal wafer comprising a single-crystal wafer, an intermediate ceramic thin film formed on a surface of the single-crystal wafer, and a superconductive ceramic thin film formed on the intermediate ceramic thin film. The intermediate ceramic thin film comprises, as a main phase, a crystalline phase having a composition by atomic ratio of Bi2Sr2CaxOy (provided that x: 1 to 2; and y: 6 to 7), and the superconductive ceramic thin film comprises, as a main phase, a crystalline phase having a composition by atomic ratio selected from the group consisting of Bi2Sr2Ca1Cu2O8 and Bi2Sr2Ca2Cu3O10. Alternatively, the intermediate ceramic thin film comprises, as a main phase, a crystalline phase having a composition by atomic ratio selected from the group consisting of Tl1Ba2CasOt (provided that s: 1 to 2; and t: 4.5 to 5.5) and Tl2Ba2CavOw (provided that v: 1 to 3; and w: 6 to 8), and the superconductive ceramic thin film comprises, as a main phase, a crystalline phase having a composition by atomic ratio selected from the group consisting of Tl2Ba2Ca1Cu2O8, Tl2Ba2Ca2Cu3O10, Tl1Ba2Ca1Cu2O7, Tl1Ba2Ca2Cu3O9, and Tl1Ba2Ca3Cu4O11. |
