发明名称 X-ray exposure method with an X-ray mask comprising phase shifter sidewalls
摘要 In an X-ray exposure method, consideration was made to application of a concept of a phase shift method which is used for a light exposure method, in order to improve the resolution. As a result, phase shift layers made of a material having an appropriate refractivity are provided on side walls of an absorbing pattern of an X-ray mask to improve the resolution by an interference effect. One or more layers made of a material having a refractivity different from that of the absorbing pattern are formed on the side walls of the absorbing pattern of the X-ray mask.
申请公布号 US5372916(A) 申请公布日期 1994.12.13
申请号 US19920909309 申请日期 1992.07.06
申请人 HITACHI, LTD. 发明人 OGAWA, TARO;MOCHIJI, KOZO;MURAYAMA, SEIICHI;OIZUMI, HIROAKI;SOGA, TAKASHI;YAMAMOTO, SEIJI;OCHIAI, ISAO
分类号 G03F1/00;G03F1/14;G03F7/20;(IPC1-7):G03C5/00 主分类号 G03F1/00
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