发明名称 |
X-ray exposure method with an X-ray mask comprising phase shifter sidewalls |
摘要 |
In an X-ray exposure method, consideration was made to application of a concept of a phase shift method which is used for a light exposure method, in order to improve the resolution. As a result, phase shift layers made of a material having an appropriate refractivity are provided on side walls of an absorbing pattern of an X-ray mask to improve the resolution by an interference effect. One or more layers made of a material having a refractivity different from that of the absorbing pattern are formed on the side walls of the absorbing pattern of the X-ray mask.
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申请公布号 |
US5372916(A) |
申请公布日期 |
1994.12.13 |
申请号 |
US19920909309 |
申请日期 |
1992.07.06 |
申请人 |
HITACHI, LTD. |
发明人 |
OGAWA, TARO;MOCHIJI, KOZO;MURAYAMA, SEIICHI;OIZUMI, HIROAKI;SOGA, TAKASHI;YAMAMOTO, SEIJI;OCHIAI, ISAO |
分类号 |
G03F1/00;G03F1/14;G03F7/20;(IPC1-7):G03C5/00 |
主分类号 |
G03F1/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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