发明名称 MANUFACTURE OF POROUS SILICON
摘要 PURPOSE:To control the light emitting characteristics such as luminous efficiency, luminescent color, etc., by feeding intermittent formation current. CONSTITUTION:Holes produced in a silicon substrate and fluorine ions (f<->) in a formation solvent during anode formation step are concerned with the formation of a porous silicon layer. Accordingly, the movement of holes and fluorine ions in these reaction systems is modulated by the electric field imposed on the reaction systems to change the formed porous silicon structure for changing the light emitting characteristics of the porous silicon. That is, a pulsive current in equal conduction time tH and current stoppage time tL as the formation current is conducted. Through these procedures, the light emitting intensity can be changed by the same formation amount of electricity. Furthermore, the porous silicon can be manufactured by the less formation amount of electricity than that in the conventional cases thereby enabling the energy cost to be cut down.
申请公布号 JPH0799342(A) 申请公布日期 1995.04.11
申请号 JP19930264861 申请日期 1993.10.22
申请人 SUMITOMO METAL IND LTD 发明人 TAKASUKA EIRYO;SANO NAOYUKI
分类号 H01L21/306;H01L33/30;H01L33/34 主分类号 H01L21/306
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