| 摘要 |
PURPOSE:To realize a dosimeter, e.g. an exposure dosimeter, using a single detector without mounting a plurality of detectors for gamma-ray and neutron beam by setting the thickness of a semiconductor substrate greater than the width of depletion layer at a maximum reverse bias voltage. CONSTITUTION:An Al electrode 2a is provided on one surface of a P type silicon semiconductor crystal 1 and an Al electrode 2b is provided on the other surface through a baron intrusion layer 4 to form a surface barrier type detection element having diode structure. A nuclear reaction tank 5 for <10>B or <6>Li, which causes nuclear reaction with neutrons to radiate heavily charged particles, e.g. alpha-ray, is formed immediately above the Al electrode 2a on the barrier side of detection element thus forming a neutron gamma-ray detection element having sensitivity of neutron. The thickness of the diode crystal 1 in the semiconductor radiation detecting element is set greater than the width of the depletion layer 3 at a maximum verse bias voltage.
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