| 发明名称 |
Manufacturing method of semiconductor device |
| 摘要 |
A method of manufacturing a semiconductor device having a bonding pad portion. A wiring is formed on a substrate and an insulative protective film is formed onto the wiring. An opening portion is exposed and serves as the bonding pad portion in which a surface of a part of the wiring is exposed. A metal film is selectively grown only in this opening position.
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| 申请公布号 |
US5476815(A) |
申请公布日期 |
1995.12.19 |
| 申请号 |
US19940277133 |
申请日期 |
1994.07.19 |
| 申请人 |
CANON KABUSHIKI KAISHA |
发明人 |
KAWASUMI, YASUSHI |
| 分类号 |
H01L21/28;H01L21/285;H01L21/3205;H01L21/60;H01L23/485;H01L23/52;(IPC1-7):H01L21/441 |
主分类号 |
H01L21/28 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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