摘要 |
A system and method for semiconductor manufacture using on-site distillation to obtain ultra pure nitric acid from technical grade starting material. The source material for distillation (T-3) is provided at a concentration higher than that of the high boiling point azeotrope, so that dilution does not occur during condensation (C-1). A reflux condenser (CD-1) is used, with a purge of at least 5 % to prevent impurities from accumulating. This is performed on site, at a semiconductor manufacturing facility and the ultrapure chemical thus generated is routed directly, through ultraclean piping, to the point of use in a semiconductor front end (T-5). |
申请人 |
STARTEC VENTURES, INC.;HOFFMAN, JOE, G.;CLARK, R., SCOT;YUAN, WALLACE, I. |
发明人 |
HOFFMAN, JOE, G.;CLARK, R., SCOT;YUAN, WALLACE, I. |