发明名称 ON-SITE MANUFACTURE OF ULTRA-HIGH-PURITY NITRIC ACID FOR SEMICONDUCTOR PROCESSING
摘要 A system and method for semiconductor manufacture using on-site distillation to obtain ultra pure nitric acid from technical grade starting material. The source material for distillation (T-3) is provided at a concentration higher than that of the high boiling point azeotrope, so that dilution does not occur during condensation (C-1). A reflux condenser (CD-1) is used, with a purge of at least 5 % to prevent impurities from accumulating. This is performed on site, at a semiconductor manufacturing facility and the ultrapure chemical thus generated is routed directly, through ultraclean piping, to the point of use in a semiconductor front end (T-5).
申请公布号 WO9639263(A1) 申请公布日期 1996.12.12
申请号 WO1996US09215 申请日期 1996.06.05
申请人 STARTEC VENTURES, INC.;HOFFMAN, JOE, G.;CLARK, R., SCOT;YUAN, WALLACE, I. 发明人 HOFFMAN, JOE, G.;CLARK, R., SCOT;YUAN, WALLACE, I.
分类号 C01B21/46;B01D1/00;B01D3/00;B01D3/02;B01D3/14;B01J39/04;B08B7/04;C01B7/07;C01B7/19;C01B15/013;C01C1/02;C01C1/16;F26B7/00;H01L21/304;H01L21/306;H01L21/311 主分类号 C01B21/46
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