| 摘要 |
A bipolar transistor includes a second conductivity type collector region formed in a predetermined portion of a first conductivity type semiconductor substrate, round-shape base and emitter layers formed on the collector region, a conductive layer for connecting the emitter layer to an external input/output port and connecting the contact region of the collector region, surrounded by the emitter and base regions, to a power supply port, and an insulating layer formed between the conductive layer and substrate. The bipolar transistor employs the emitter region and collector contact region as a source or drain, the insulating layer as a gate insulating layer and the conductive layer as a gate electrode, to discharge positive static electricity at the input/output port. The bipolar transistor discharges negative static electricity through the substrate using the diode between the emitter and base.
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