| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a method of etching a semiconductor substrate allowing semiconductor dice different in shape or size to be cut off from a single semiconductor substrate. SOLUTION: A semiconductor substrate etching method comprises steps of thinning a semiconductor substrate 11, forming a support layer 30 on the substrate 11, forming etching mask 28 on the substrate 11 and etching it at a temp. lower than the ambient temp., using an etchant mixture composed of hydrofluoric acid, nitric acid, phosphoric acid, sulfuric acid and wetting agent. This method enables forming of grooves 12 and 13 having the same width 15 or 17 but different thicknesses 16 and 18 and orientations, using one etching step and one etching mask only. Using this method, semiconductor dice different in size and shape can be cut off from the substrate 11.</p> |
