| 摘要 |
<p>The method for manufacturing a vertical power component on a silicon wafer comprises the following steps: the growth of a weakly doped epitaxial layer (11) of n-type conductivity, where the epitaxial layer has a thickness required to support the maximum voltage applied to the power component in the course of functioning, and the demarcation of a zone corresponding to at least one power component by an insulation wall (16) formed by making a trench (13) through the epitaxial layer and by diffusing a dopant from the trench to obtain a strongly doped p-type conductivity region (14). In a variant of the invention, the trench is constituted by sufficiently close openings so that the diffusion regions of strongly doped p-type conductivity are rejoined; e.g. the openings are of diameter 1-5 micrometre and the mutual distance is 2-10 micrometre. The trench is filled with strongly doped polycrystalline silicon. Parallel insulation walls are formed on the sides of cutting zone separating chips of the same wafer, and the distance between the insulation walls is e.g. 100 micrometre. A power component is made according to the proposed method. As in standard technology, the diffusion is carried out to form a desired component, e.g. a thyristor, comprising doped regions (5,6) of cathodic trigger and cathode respectively, and an annular stop channel (7).</p> |
