| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for producing a high quality substrate in which cracking is suppressed. SOLUTION: On a sapphire growth substrate 11 of 100μm thick or less, a substrate 12 of GaN is grown while heating the growth substrate 11 and then left as it is to be cooled. Thickness of the substrate 12 to be grown is set at 200μm or above and the curvature of the substrate 12 caused by the difference of coefficient of thermal expansion between the growth substrate 11 and the substrate 12 is set at 0.03 cm-1 or less. Since the substrate 12 is protected against cracking even if it is left as it is after growth and warped, a high quality substrate 12 is obtained.
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