发明名称 GAS CLUSTER ION BEAM IRRADIATION APPARATUS
摘要 PROBLEM TO BE SOLVED: To enable flattening with less damage unrealizable with an existing monomer ion beam, by reducing an energy component perpendicular to a workpiece machining surface while using the feature of a gas cluster ion beam that can produce an order of magnitude higher sputtering rate than the monomer ion beam. SOLUTION: A gas cluster ion beam irradiation apparatus has an irradiation angle adjustment mechanism for adjusting an angle (irradiation angle) to a normal to a machining surface of a workpiece 15 at 50°to 90°, an ion acceleration mechanism for adjusting the kinetic energy of ions at a desired value, and a workpiece rotation mechanism for rotating the workpiece 15 on a rotation axis aligned with the normal to the workpiece machining surface. COPYRIGHT: (C)2006,JPO&NCIPI
申请公布号 JP2006156065(A) 申请公布日期 2006.06.15
申请号 JP20040343294 申请日期 2004.11.29
申请人 HITACHI LTD;KYOTO UNIV 发明人 ONO SHIGERU;SASAKI SHINJI;FURUSAWA KENJI;MATSUO JIRO;AOKI SATOAKI;SEKI TOSHIO
分类号 H01J37/30;C23F4/00 主分类号 H01J37/30
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