| 发明名称 |
Capacitor having an anodic metal oxide substrate |
| 摘要 |
A structure and method including an anodic metal oxide substrate used to form a capacitor are described herein.
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| 申请公布号 |
US7288460(B2) |
申请公布日期 |
2007.10.30 |
| 申请号 |
US20060326631 |
申请日期 |
2006.01.06 |
| 申请人 |
INTEL CORPORATION |
发明人 |
MOSLEY LARRY E. |
| 分类号 |
H01L21/20;H01G4/10;H01L21/28;H01L21/44;H01L21/8242;H01L23/50;H01L23/64;H05K1/02 |
主分类号 |
H01L21/20 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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