| 摘要 |
Disclosed is a substrate processing method that dissolves and deforms a photoresist film having a first pattern formed on a substrate to reshape the resist film into a second pattern During the reflow process, an atmosphere of a thinner vapor-containing gas is established in a processing chamber. A substrate is placed on a temperature adjusting plate. The target temperature of the temperature adjusting plate is set and controlled by a control unit, and the temperature of the temperature adjusting plate is controlled by a temperature regulator based on the target temperature set by the control unit The control unit set and controls the target temperature so that it meets the following requirement: the atmospheric temperature<=the target temperature<=(the atmospheric temperature+2° C.). Due to the above, the reflowing of the resist can be performed stably, while achieving a satisfactory reflow rate although it is somewhat low.
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