| 摘要 |
A method for etching an organic anti-reflective coating (ARC) layer on a substrate in a plasma processing system comprising: introducing a process gas comprising ammonia (NH<SUB>3</SUB>), and a passivation gas; forming a plasma from the process gas; and exposing the substrate to the plasma. The process gas can, for example, constitute NH<SUB>3 </SUB>and a hydrocarbon gas such as at least one of C<SUB>2</SUB>H<SUB>4</SUB>, CH<SUB>4</SUB>, C<SUB>2</SUB>H<SUB>2</SUB>, C<SUB>2</SUB>H<SUB>6</SUB>, C<SUB>3</SUB>H<SUB>4</SUB>, C<SUB>3</SUB>H<SUB>6</SUB>, C<SUB>3</SUB>H<SUB>8</SUB>, C<SUB>4</SUB>H<SUB>6</SUB>, C<SUB>4</SUB>H<SUB>8</SUB>, C<SUB>4</SUB>H<SUB>10</SUB>, C<SUB>5</SUB>H<SUB>8</SUB>, C<SUB>5</SUB>H<SUB>10</SUB>, C<SUB>6</SUB>H<SUB>6</SUB>, C<SUB>6</SUB>H<SUB>10</SUB>, and C<SUB>6</SUB>H<SUB>12</SUB>. Additionally, the process chemistry can further comprise the addition of helium. The present invention further presents a method for forming a bilayer mask for etching a thin film on a substrate, wherein the method comprises: forming the thin film on the substrate; forming an ARC layer on the thin film; forming a photoresist pattern on the ARC layer; and transferring the photoresist pattern to the ARC layer with an etch process using a process gas comprising ammonia (NH<SUB>3</SUB>), and a passivation gas.
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