| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device in which a highly reliable full silicide MOSFET and a silicide MOSFET can be formed on the same substrate easily as compared with prior art. SOLUTION: The method for manufacturing a semiconductor device includes steps of for forming a gate insulating film 30 on a semiconductor substrate 10, for forming a first gate electrode 40 and a second gate electrode 42 on the gate insulating film, for depositing a mask material 90 on the first gate electrode and the second gate electrode, for patterning the mask material to expose the upper surface of the first gate electrode while covering the second gate electrode, for etching the upper part of the first gate electrode by utilizing the mask material, for removing the mask material, for depositing a metal film 100 on the first gate electrode and the second gate electrode, and for silicificating the entire first gate electrode and the upper part of the second gate electrode. COPYRIGHT: (C)2008,JPO&INPIT
|
