发明名称 SUBSTRATE TREATMENT APPARATUS
摘要 PROBLEM TO BE SOLVED: To prevent or inhibit the flow of a vaporized gas of a liquid raw material into a carrier gas supply line. SOLUTION: A substrate treatment apparatus is equipped with a treatment chamber 201 to accommodate a wafer 200, a heater 207 to heat the wafer 200, a gas supply system to supply a desired treatment gas into the treatment chamber 201, a gas exhaust system to exhaust an atmosphere in the treatment chamber 201, and a controller 280 wherein the gas supply system includes a vaporizing unit to vaporize a liquid raw material. The vaporizing unit includes a carrier gas supply pipe 310 connected through a valve 311 and a gas supply pipe 232a of the liquid raw material connected through a valve 301, and the controller 280 executes the closing operation of the valve 301 in a state that the valve 311 is opened when pressure in the carrier gas supply pipe 310 is kept higher than that in the gas supply pipe 232a and the operation of closing the valve 301 is performed. COPYRIGHT: (C)2008,JPO&INPIT
申请公布号 JP2008227261(A) 申请公布日期 2008.09.25
申请号 JP20070065059 申请日期 2007.03.14
申请人 HITACHI KOKUSAI ELECTRIC INC 发明人 KONNO YOSHIKAZU;HOTTA TOMOKI
分类号 H01L21/31;C23C16/455 主分类号 H01L21/31
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